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 SKM 200GB125D
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANSTM 3 Ultra Fast IGBT Modules
SKM 200GB125D SKM 200GAL125D SKM 200GAR125D
Inverse diode
Freewheeling diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Features
Typical Applications
Inverse diode
FWD
Thermal characteristics
Mechanical data GB GAL GAR
1
14-09-2005 RAA
(c) by SEMIKRON
SKM 200GB125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
14-09-2005 RAA
(c) by SEMIKRON
SKM 200GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-09-2005 RAA
(c) by SEMIKRON
SKM 200GB125D
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
14-09-2005 RAA
(c) by SEMIKRON


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